p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 100 volt v ds *r ds(on) =20 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d -140 ma pulsed drain current i dm -1.2 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -50 m a m a v ds =-100v, v gs =0 v ds =-80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -300 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 20 w v gs =-10v,i d =-150ma forward transconductance (1)(2) g fs 50 ms v ds =-25v,i d =-150ma input capacitance (2) c iss 50 pf common source output capacitance (2) c oss 15 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 8ns v dd ? -25v, i d =-150ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 8ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 ) s wi tc hin g t im es m easu r ed wi t h 50 w sou r ce im peda n ce a n d < 5 n s ri se t im e o n a pu l se ge n e r ato r e-line to92 compatible ZVP3310A 3-432 d g s typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) 0 0 v ds - drain source voltage (volts) 0-2 -4 -6 -8 -10 -0.6 -0.4 0 -0.2 i d - d r a in c u r r e nt ( amps) v ds= -10v 0 -10 -6 -2 -4 -8 0-2 -4-6-8-10 i d= -0.3a -0.15a -0.075a i d - d r a in c u r r e nt ( amps) -5v -4v -0.6 -0.4 -0.2 -10v -8v -6v -9v -7v -4.5v -3.5v v gs= -20v -12v -16v i d - drain current (amps) -5v -4v -0.6 -0.4 -0.2 -10v -8v -6v -9v -7v v gs= -20v -12v -16v -14v on-resistance v drain current i d- drain current (ma) r ds(on) -drain source on resistance ( w ) 10 -10 -100 -1000 -20v 100 -5v -6v -7v v gs =-4v -8v -10v 50 normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) no r malis e d r ds(on) and v gs(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ai n - s o u rc e r e s i s tanc e r d s( o n ) ga t e t h r e s h o ld v o l t ag e v gs ( t h ) i d= -150ma v gs= -10v i d= -1ma v gs= v ds 2.6 180 ZVP3310A 3-433
p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 100 volt v ds *r ds(on) =20 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d -140 ma pulsed drain current i dm -1.2 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -50 m a m a v ds =-100v, v gs =0 v ds =-80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -300 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 20 w v gs =-10v,i d =-150ma forward transconductance (1)(2) g fs 50 ms v ds =-25v,i d =-150ma input capacitance (2) c iss 50 pf common source output capacitance (2) c oss 15 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 8ns v dd ? -25v, i d =-150ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 8ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 ) s wi tc hin g t im es m easu r ed wi t h 50 w sou r ce im peda n ce a n d < 5 n s ri se t im e o n a pu l se ge n e r ato r e-line to92 compatible ZVP3310A 3-432 d g s typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics -2 -4 -6 -8 -10 0 -10 -20 -30 -40 -50 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) 0 0 v ds - drain source voltage (volts) 0-2 -4 -6 -8 -10 -0.6 -0.4 0 -0.2 i d - d r a in c u r r e nt ( amps) v ds= -10v 0 -10 -6 -2 -4 -8 0-2 -4-6-8-10 i d= -0.3a -0.15a -0.075a i d - d r a in c u r r e nt ( amps) -5v -4v -0.6 -0.4 -0.2 -10v -8v -6v -9v -7v -4.5v -3.5v v gs= -20v -12v -16v i d - drain current (amps) -5v -4v -0.6 -0.4 -0.2 -10v -8v -6v -9v -7v v gs= -20v -12v -16v -14v on-resistance v drain current i d- drain current (ma) r ds(on) -drain source on resistance ( w ) 10 -10 -100 -1000 -20v 100 -5v -6v -7v v gs =-4v -8v -10v 50 normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) no r malis e d r ds(on) and v gs(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ai n - s o u rc e r e s i s tanc e r d s( o n ) ga t e t h r e s h o ld v o l t ag e v gs ( t h ) i d= -150ma v gs= -10v i d= -1ma v gs= v ds 2.6 180 ZVP3310A 3-433
typical characteristics transconductance v drain current i d - drain current (amps ) g f s -t r ans c o n ducta n c e ( m s) 0 q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) g fs - t r an sc o nd ucta nce (ms) 0-1-2-3-4-5-6-7-8-9-10 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capac ita n c e ( p f ) c oss v gs - gat e sou r ce v olta ge ( v olts) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -25v i d=- 0.2a -50v -100v 0.1 0.2 0.3 0.4 0.5 0.6 c iss c rss 0.7 0.8 0.9 1.0 1.1 1.2 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 0 -10 -20 -30 -40 -50 -60 -70 -80 v gs= 0v f =1mhz 0 30 20 10 40 50 ZVP3310A 3-434
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